9781558994355-1558994351-Computational and Mathematical Models of Microstructural Evolution: Volume 529 (MRS Proceedings)

Computational and Mathematical Models of Microstructural Evolution: Volume 529 (MRS Proceedings)

ISBN-13: 9781558994355
ISBN-10: 1558994351
Edition: 1
Author: Rajiv K. Kalia, Long-Qing Chen, Jeffrey W. Bullard, A. Marshall Stoneham
Publication date: 1998
Publisher: Cambridge University Press
Format: Hardcover 200 pages
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Book details

ISBN-13: 9781558994355
ISBN-10: 1558994351
Edition: 1
Author: Rajiv K. Kalia, Long-Qing Chen, Jeffrey W. Bullard, A. Marshall Stoneham
Publication date: 1998
Publisher: Cambridge University Press
Format: Hardcover 200 pages

Summary

Computational and Mathematical Models of Microstructural Evolution: Volume 529 (MRS Proceedings) (ISBN-13: 9781558994355 and ISBN-10: 1558994351), written by authors Rajiv K. Kalia, Long-Qing Chen, Jeffrey W. Bullard, A. Marshall Stoneham, was published by Cambridge University Press in 1998. With an overall rating of 3.9 stars, it's a notable title among other books. You can easily purchase or rent Computational and Mathematical Models of Microstructural Evolution: Volume 529 (MRS Proceedings) (Hardcover) from BooksRun, along with many other new and used books and textbooks. And, if you're looking to sell your copy, our current buyback offer is $0.36.

Description

This book, first published in 1998, continues the long-standing and highly successful series on amorphous silicon science and technology. The opening article honors the pioneering use of photons to probe silicon films and provides an historical overview of optical absorption for studies of the Urbach edge and disorder. Additional invited presentations focus on new approaches for the fabrication of higher stability amorphous silicon-based materials and solar cells, and on the characterization of materials and cells both structurally and electronically. The book includes topics relevant to solar cells, including the role of hydrogen in metastability phenomena and deposition processes, and the application of atomistic material simulations in elucidating film growth mechanisms and structure as characterized by in situ probes. Chapters are devoted to nanostructures, such as quantum dots and wires, and to nano/microcrystalline and poly/single crystalline films, the latter involving new concepts in crystalline grain growth and epitaxy. Device applications are also highlighted, such as thin-film transistors, solar cells, and image sensors, operable on the meter scale, to memories, operable on the nanometer scale.

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