9781119009740-111900974X-Introduction to Magnetic Random-Access Memory

Introduction to Magnetic Random-Access Memory

ISBN-13: 9781119009740
ISBN-10: 111900974X
Edition: 1
Author: Dieny, Bernard, Goldfarb, Ronald B., Lee, Kyung-Jin
Publication date: 2016
Publisher: Wiley-IEEE Press
Format: Hardcover 264 pages
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Book details

ISBN-13: 9781119009740
ISBN-10: 111900974X
Edition: 1
Author: Dieny, Bernard, Goldfarb, Ronald B., Lee, Kyung-Jin
Publication date: 2016
Publisher: Wiley-IEEE Press
Format: Hardcover 264 pages

Summary

Acknowledged authors Dieny, Bernard, Goldfarb, Ronald B., Lee, Kyung-Jin wrote Introduction to Magnetic Random-Access Memory comprising 264 pages back in 2016. Textbook and eTextbook are published under ISBN 111900974X and 9781119009740. Since then Introduction to Magnetic Random-Access Memory textbook was available to sell back to BooksRun online for the top buyback price or rent at the marketplace.

Description

Magnetic random-access memory (MRAM) is poised to replace traditional computer memory based on complementary metal-oxide semiconductors (CMOS). MRAM will surpass all other types of memory devices in terms of nonvolatility, low energy dissipation, fast switching speed, radiation hardness, and durability. Although toggle-MRAM is currently a commercial product, it is clear that future developments in MRAM will be based on spin-transfer torque, which makes use of electrons’ spin angular momentum instead of their charge. MRAM will require an amalgamation of magnetics and microelectronics technologies. However, researchers and developers in magnetics and in microelectronics attend different technical conferences, publish in different journals, use different tools, and have different backgrounds in condensed-matter physics, electrical engineering, and materials science.

This book is an introduction to MRAM for microelectronics engineers written by specialists in magnetic materials and devices. It presents the basic phenomena involved in MRAM, the materials and film stacks being used, the basic principles of the various types of MRAM (toggle and spin-transfer torque; magnetized in-plane or perpendicular-to-plane), the back-end magnetic technology, and recent developments toward logic-in-memory architectures. It helps bridge the cultural gap between the microelectronics and magnetics communities.
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